diffusion n. 1.散布,發(fā)散。 2.傳播,普及。 3.冗長(zhǎng)。 4.【化學(xué)】滲濾。 5.【物理學(xué)】擴(kuò)散,漫射。 the diffusion of knowledge 知識(shí)的傳播。 diffusion of speech 演說(shuō)的冗長(zhǎng)。 diffusion of light 光線的漫射。
velocity n. 1.迅速;快速。 2.速度,速率。 3.周轉(zhuǎn)率。 at a velocity of 100 miles per hour 用每小時(shí)一百英里的速度。 dart off with the velocity of a bird 像鳥(niǎo)一樣迅速飛跑過(guò)去。 drag-free velocity無(wú)阻力飛速,真空飛速。 escape velocity(克服地球引力的)第二宇宙速度,逃逸速度。 final velocity (發(fā)射物的)終速。 initial [muzzle] velocity(發(fā)射物的)初速[腔口速度]。 uniform [variable] velocity勻[變]速。
6 . the melting of the grain boundary is the reason of the semi - solid grain globalization , and its control factors were the atomic diffusion velocity and the liquid - solid interface curvature 6 、半固態(tài)晶粒球狀化的基本原因是晶界熔化,其控制因素是因液界面處原子擴(kuò)散遷移的速度和界面曲率。
The samples were welded at 750 , 800 , 850 and 900 . the diffusion coefficients ( d ) of cu and ni at interface increased with the increase of welding temperature . and comparing with radiation heating , atom diffusion velocity at interface quickened 其它條件相同時(shí),分別在750 、 800 、 850 、 900的溫度下采用脈沖大電流加熱連接cu和ni片狀材料,結(jié)果表明接觸面處cu和ni的擴(kuò)散系數(shù)隨溫度升高而增大。
Upon the foundation of contracted - ball , function equations of conversion rates of grains and time are deduced . it is brought forward that the conversion rates of grains rely on reaction velocity at interface and diffusion velocity in reacted layer and at the same time relate to reaction process 建立了粉粒反應(yīng)的縮球模型,推導(dǎo)了顆粒反應(yīng)轉(zhuǎn)換率隨時(shí)間的變化規(guī)律,提出了顆粒反應(yīng)轉(zhuǎn)換率取決于界面化學(xué)反應(yīng)速率和已反應(yīng)層內(nèi)的擴(kuò)散速率兩個(gè)因素并與反應(yīng)進(jìn)程有關(guān)。
The diffusion carrier concentration profile and junction depth were measured and compared with conventional furnace processing diffusion ( cfd ) . it presented following conclusions : 1 ) the temperature distribution in quartz chamber of rtd furnace is uniform because square resistance is uniform after rtd ; 2 ) the diffusion velocity of rtd furnace by a factor of three compare to conventional furnace processing diffusion ( rtd ) ; 3 ) if diffusion temperature and doping phosphorus are equivalent , doping phosphorus of rtd are more than of cfd in equivalent distance to the silicon surface 實(shí)驗(yàn)研究了快速熱擴(kuò)散( rtd ) :通過(guò)旋涂磷膠和印刷磷漿兩種方式考查了2 4和103 103單晶硅的快速熱擴(kuò)散特性,發(fā)現(xiàn): 1 )此樣機(jī)的溫度場(chǎng)在空間分布上是均勻的; 2 )快速熱擴(kuò)散可以比傳統(tǒng)擴(kuò)散快3倍的速度進(jìn)行擴(kuò)散; 3 )在擴(kuò)散溫度和摻雜磷源相同的條件下,與傳統(tǒng)擴(kuò)散相比,快速熱擴(kuò)散將雜質(zhì)向結(jié)更深的地方推進(jìn)。
By control the adulteration of kmno4 powder in the raw materials , we found the adulteration of kmn04 powder decrease the dosage of easy melted metal mn , and release the hot - trap problem , enhance the diffusion velocity as well as cut down the synthesis temperature and combustion propagation velocity of the system 320左右體系內(nèi)sro _ 2分解放出氧氣,并且和空氣中的co _ 2發(fā)生反應(yīng)生成了srco _ 3發(fā)生強(qiáng)烈的放熱反應(yīng),緩慢的放熱包。 450左右體系內(nèi)naclo _ 4分解吸熱, shs反應(yīng)被觸發(fā),反應(yīng)劇烈,放出大量的熱。